Abstract
Beta-Gallium Oxide is an emerging ultra-wide band gap semiconductor with a predicted critical breakdown field much higher than the commercial wide band gap semiconductors such as Gallium Nitride and Silicon Carbide. The key attractive feature is the availability of single crystal large area bulk substrates. This talk will begin with the motivation for pursuing research on ultra-wide band gap semiconductors for applications in power electronics. Key results in epitaxial growth and device performance will be highlighted. The main theme of the talk will be to highlight and discuss the interrelationship between material properties, material processing and device performance. The future outlook for Gallium Oxide in achieving its theoretical potential, as well as the key challenges & limitations, will also be discussed.
Biography
Sriram Krishnamoorthy is currently a Mehrabian Career Development Chair Assistant professor in the Materials Department at University of California, Santa Barbara, where his group works at the intersection of materials, electrical engineering, and physics to study and engineer next generation (ultra)wide band gap semiconductors such as Gallium Oxide. His research interests are in the areas of epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics.