Abstract
The Ill-nitride family (AIN, GaN, InN, and their alloys) is a key semiconductor group, extensively studied over the past two decades for optoelectronics (e.g., LEDs, lasers, photodetectors). InGaN-based light emitters have revolutionized energy-efficient, eco-friendly solid-state lighting and lasing technologies. By alloying GaN with AIN, AlGaN ternary alloys with tunable direct bandgaps (3.4 eV to 6.1 eV) enable a wide UV spectral range (360 nm to 210 nm). This presentation will cover: (1) development of efficient microLEDs and microPDs across deep UV to visible bands, along with performance- enhancing strategies; (2) monolithic integration on single platforms for on-chip and free-space optical communication; and (3) novel GaN-based device architectures for emerging applications, such as photoelectrochemical devices for bipolar photodetection and optoelectronic synapses for biological uses.
Biography
Prof. Haiding Sun, Ph.D. (Electrical Engineering, Boston University), is a Professor in the School of Microelectronics at the University of Science and Technology of China, leading the iGaN Laboratory. He specializes in the physics, epitaxy, fabrication, and characterization of group Ill-Nitride wide bandgap semiconductors for optoelectronics and electronics. He has published 150+ peer-reviewed papers (5700+ Google Scholar citations), including in Nature journals, Advanced Materials, and Nano Letters, with 4 book chapters and 20+ patents. Featured in 100+ media outlets, he is an IEEE Senior Member, Associate Editor for lEEE Photonics Technology Letters and Journal of Semiconductors, and co-chair/subcommittee member for CLEO, IEEE Photonics, and CSW conferences. His accolades include a National Science Foundation of China Youth Grant and other top grants.