Member of Electronics & Photonics Solutions Group
Mark Rodwell’s research focuses on extending the operation of electronics to the highest feasible frequencies. His research interests includes energy efficient semiconductor devices (diodes, transistors, photodiodes), semiconductor fabrication process, circuit design, interconnects, instruments, and communications systems. Particular interests include THz InP (indium phosphide) bipolar transistors, nm III-V MOSFETs (metal-oxide-semiconductor field-effect transistors) for both VLSI (very large scale integration) and THz (terahertz) applications, and IC (integrated circuit) design above 50 GHz (gigahertz) in both III-V and Silicon VLSI technologies.
Mark Rodwell holds the Doluca Family Endowed Chair in Electrical and Computer Engineering at UC Santa Barbara where he also directs the UCSB Nanofabrication laboratory and its participation in the NSF National Nanofabrication Infrastructure Network (NNIN). He received his Ph.D. in Electrical Engineering from Stanford University in 1988 and worked at AT&T Bell Laboratories from 1982 to 1984. Rodwell received the 2010 IEEE David Sarnoff Award and the 2009 IEEE IPRM Conference Award for the development of indium phosphide- (InP) based bipolar integrated circuit (IC) technology, at both device and circuit design level, for mm-wave and sub-mm-wave applications. His group's work on gallium arsenide (GaAs) Schottky-diode ICs for subpicosecond /mm-wave instrumentation was awarded the 1997 IEEE Microwave Prize and the 1998 European Microwave Conference Microwave Prize. Rodwell was elected IEEE Fellow in 2003.