Arthur Gossard
Institute Role
Member of Production & Storage Solutions Group
Role in Affiliated Centers
Member of the Center for Energy Efficient Materials
Research
Arthur Gossard’s special interests are molecular beam epitaxy, the
growth of quantum wells, superlattices, magnetic semiconductors and
metal/semiconductor nanocomposites and their applications to high performance
electrical and optical devices and the physics of low-dimensional structures. A
member of the Center for Energy Efficient Materials (CEEM), Gossard contributes
to research on metal/semiconductor nanocomposites that will allow the
modification of intrinsic material properties that are important for high
efficiency thermoelectrics.
Biography
Arthur Gossard is a Professor of Materials and Electrical &
Computer Engineering at UC Santa Barbara. He holds a
B.A. from Harvard, a Ph.D. from UC Berkeley and was formerly a Distinguished
Member of the Technical Staff of AT&T Bell Laboratories. Gossard grew the
first alternate monolayer artificial superlattices in semiconductors and the
first modulation doped quantum wells. He was also co-discoverer of the quantum
confined Stark effect and the fractional quantization of the Hall Effect. He is
a recipient of numerous prizes including The American
Association for the Advancement of Science (AAAS) Newcomb Cleveland Prize
(2005, 2006) and the James C. McGroddy Prize for New Materials from American
Physical Society (2001). Gossard has been a member of the National Academy of
Sciences since 2001.
