Arthur Gossard

Professor
Materials, Electrical and Computer Engineering
805-893-2686
gossard [at] engineering [dot] ucsb [dot] edu

The coherent flow of electrons through a quantum point contact formed in a two dimensional electron gas inside a GaAs/AlGaAs heterostructure.
The coherent flow of electrons through a quantum point contact formed in a two dimensional electron gas inside a GaAs/AlGaAs heterostructure.

Institute Role
Member of Production & Storage Solutions Group

Role in Affiliated Centers
Member of the Center for Energy Efficient Materials

Research
Arthur Gossard’s special interests are molecular beam epitaxy, the growth of quantum wells, superlattices, magnetic semiconductors and metal/semiconductor nanocomposites and their applications to high performance electrical and optical devices and the physics of low-dimensional structures. A member of the Center for Energy Efficient Materials (CEEM), Gossard contributes to research on metal/semiconductor nanocomposites that will allow the modification of intrinsic material properties that are important for high efficiency thermoelectrics.

Biography
Arthur Gossard is a Professor of Materials and Electrical & Computer Engineering at UC Santa Barbara. He holds a B.A. from Harvard, a Ph.D. from UC Berkeley and was formerly a Distinguished Member of the Technical Staff of AT&T Bell Laboratories. Gossard grew the first alternate monolayer artificial superlattices in semiconductors and the first modulation doped quantum wells. He was also co-discoverer of the quantum confined Stark effect and the fractional quantization of the Hall Effect. He is a recipient of numerous prizes including The American Association for the Advancement of Science (AAAS) Newcomb Cleveland Prize (2005, 2006) and the James C. McGroddy Prize for New Materials from American Physical Society (2001). Gossard has been a member of the National Academy of Sciences since 2001.

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